Handbook for III-V high electron mobility transistor technologies / (Record no. 96617548)

MARC details
000 -LEADER
fixed length control field 04723cam a2200565Ki 4500
001 - CONTROL NUMBER
control field 9780429460043
003 - CONTROL NUMBER IDENTIFIER
control field FlBoTFG
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220520133239.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cnu|||unuuu
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 190516s2019 flu of 000 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency OCoLC-P
Language of cataloging eng
Description conventions rda
-- pn
Transcribing agency OCoLC-P
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780429460043
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 042946004X
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780429862519
Qualifying information (electronic bk. : Mobipocket)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 0429862512
Qualifying information (electronic bk. : Mobipocket)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780429862526
Qualifying information (electronic bk. : EPUB)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 0429862520
Qualifying information (electronic bk. : EPUB)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9781138625273
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780429862533
Qualifying information (electronic bk. : PDF)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 0429862539
Qualifying information (electronic bk. : PDF)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 1138625272
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)1101422745
Canceled/invalid control number (OCoLC)1101774954
-- (OCoLC)1101966603
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC-P)1101422745
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7871.95
072 #7 - SUBJECT CATEGORY CODE
Subject category code SCI
Subject category code subdivision 055000
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 007000
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 008010
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJF
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 009070
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815/284
Edition number 23
245 00 - TITLE STATEMENT
Title Handbook for III-V high electron mobility transistor technologies /
Statement of responsibility, etc. edited by D. Nirmal, J. Ajayan.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Boca Raton, FL :
Name of producer, publisher, distributor, manufacturer CRC Press,
Date of production, publication, distribution, manufacture, or copyright notice 2019.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (xii, 430 pages).
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note 1. Motivation Behind High Electron Mobility Transistors [Mayank Chakraverty] 2. Introduction to High Electron Mobility Transistors [Rama Komaragiri] 3. HEMT Material Technology and Epitaxial Deposition Techniques [Rama Komaragiri] 4. Source/Drain, Gate and Channel Engineering in HEMTs [Palash Das, T. R. Lenka, Satya Sopan Mahato, and A. K. Panda] 5. AlGaN/GaN HEMTs for High Power Applications [P. Prajoon and Anuja Menokey] 6. AlGaN/GaN HEMT Fabrication and Challenges [Gourab Dutta, Srikanth Kanaga, Nandita DasGupta, and Amitava DasGupta] 7. Analytical Modeling of High Electron Mobility Transistors [N. B. Balamurugan] 8. Polarization Effects in AlGaN/GaN HEMTs [Palash Das, T. R. Lenka, Satya Sopan Mahato, and A. K. Panda] 9. Current Collapse in AlGaN/GaN HEMTs [Sneha Kabra and Mridula Gupta] 10. AlGaN/GaN HEMT Modeling and Simulation [Binit Syamal and Atanu Kundu] 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs [Vimala Palanichamy] 12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications [Nilesh Kumar Jaiswal and V. N. Ramakrishnan] 13. A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System [Roman Garcia-Perez, Karen Lozano, Jorge Castillo, and Hasina F. Huq] 14. Metamorphic HEMTs for Sub Millimeter Wave Applications [J. Ajayan and D. Nirmal] 15. Metal Oxide Semiconductor High Electron Mobility Transistors [D. K. Panda, G. Amarnath, and T. R. Lenka] 16. Double Gate High Electron Mobility Transistors [Ajith Ravindran]
520 ## - SUMMARY, ETC.
Summary, etc. This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
588 ## - SOURCE OF DESCRIPTION NOTE
Source of description note OCLC-licensed vendor bibliographic record.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Modulation-doped field-effect transistors
Form subdivision Handbooks, manuals, etc.
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element SCIENCE / Physics
Source of heading or term bisacsh
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY / Electricity
Source of heading or term bisacsh
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY / Electronics / Circuits / General
Source of heading or term bisacsh
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING / Mechanical.
Source of heading or term bisacsh
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Nirmal, D.,
Relator term editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Ajayan, J.,
Relator term editor.
856 40 - ELECTRONIC LOCATION AND ACCESS
Materials specified Taylor & Francis
Uniform Resource Identifier <a href="https://www.taylorfrancis.com/books/9780429460043">https://www.taylorfrancis.com/books/9780429460043</a>
856 42 - ELECTRONIC LOCATION AND ACCESS
Materials specified OCLC metadata license agreement
Uniform Resource Identifier <a href="http://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf">http://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf</a>

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